Single Phase Rectifier Bridge PSB 55 IdAVM VRRM = 50 A = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSB 55/08 PSB 55/12 PSB 55/14 PSB 55/16 PSB 55/18 ~ ~ Symbol Test Conditions IdAVM IFSM TC = 64°C, module TVJ = 45°C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine 50 750 820 A A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 670 740 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2800 2820 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2250 2300 A2 s A2 s -40 ... + 150 150 -40 ... + 150 °C °C °C 2500 3000 V∼ V∼ 5 3 200 Nm Nm g ∫ i2 dt TVJ TVJM Tstg VISOL Md Weight 50/60 HZ, RMS IISOL ≤ 1 mA Maximum Ratings t = 1 min t=1s Mounting torque Terminal connection torque typ. (M5) (M5) Features • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered E 148688 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394“) Symbol Test Conditions Characteristic Value IR VR = VRRM VR = VRRM ≤ ≤ 0.3 10.0 mA mA VF VTO rT RthJC IF = 150 A TVJ = 25°C For power-loss calculations only TVJ = TVJM ≤ 1.6 0.85 8 V V mΩ per diode; DC current per module 2.6 0.65 K/W K/W RthJK per diode; DC current per module 2.84 0.71 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 7.8 7.8 50 mm mm m/s2 TVJ = 25°C TVJ = TVJM POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions PSB 55 200 [A] 1:TVJ= 150°C IF(OV) -----IFSM 2:TVJ= 25°C 150 4 10 2 As IFSM (A) TVJ=45°C TVJ=150°C 1.6 750 670 TVJ=45°C 1.4 100 1.2 10 3 TVJ=150°C 1 0 VRRM 50 0.8 1/2 VRRM IF 1 0 0.5 0.6 2 1 1.5 VF[V] 2 10 2.5 0.4 0 1 10 Fig. 1 Forward current versus voltage drop per diode 100 [W] 1 VRRM 10 2 3 t[ms] 10 85 TC 0.6 0.35 90 = RTHCA [K/W] 4 t [ms] 70 105 60 10 DC sin.180° rec.120° re c.60° .30° [A] 100 1.35 6 Fig. 3 ∫i2dt versus time (1-10ms) per diode (or thyristor) 95 0.85 80 2 1 10 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration PSB 55 2 50 110 115 120 2.35 40 DC sin.180° rec.120° rec.60° rec.30° 20 PVTOT 0 125 130 135 5.35 140 145 °C 150 10 IFAVM 30 30 [A] 0 Tamb 50 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature 10 IdAV 0 50 100 150 20 T C(°C) Fig.5 Maximum forward current at case temperature 4 K/W Z thJK Z thJC 3 2 1 Z th 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions