IXYS VUO190

VUO 190
IdAV = 248 A
VRRM = 800-1800 V
Three Phase
Rectifier Bridge
V
V
800
1200
1400
1600
1800
800
1200
1400
1600
1800
VUO 190-08NO7
VUO 190-12NO7
VUO 190-14NO7
VUO 190-16NO7
VUO 190-18NO7*
~
~
+
Type
~
~
~
~
–
+
* delivery time on request
Symbol
Test Conditions
IdAV
IdAV
TC = 100°C, module
TA = 35°C (RthCA = 0.2 K/W), module
IFSM
TVJ = 45°C;
VR = 0
248
165
A
A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
2800
3300
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
2500
2750
A
A
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
39 200
45 000
A2s
A2 s
31 200
31 300
2
As
A2 s
-40...+150
150
-40...+125
°C
°C
°C
2500
3000
V~
V~
5 ± 15 %
5 ± 15 %
270
Nm
Nm
g
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
50/60 Hz, RMS
IISOL ≤ 1 mA
Md
Weight
Mounting torque (M6)
Terminal connection torque (M6)
typ.
Symbol
Test Conditions
IR
VR = VRRM;
VR = VRRM;
TVJ = 25°C
TVJ = TVJM
≤
≤
0.3
5
mA
mA
VF
IF
TVJ = 25°C
≤
1.43
V
VT0
rT
For power-loss calculations only
0.8
2.2
V
mΩ
RthJC
per diode, 120°
per module
per diode, 120°
per module
0.45
0.075
0.6
0.1
K/W
K/W
K/W
K/W
dS
dA
a
t = 1 min
t=1s
●
●
●
Applications
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
●
●
●
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling
●
●
●
Dimensions in mm (1 mm = 0.0394")
M6x10
Data according to IEC 60747 and refer to a single diode unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
3
30
Characteristic Values
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
© 2000 IXYS All rights reserved
●
7
VISOL
RthJH
●
●
TVJ
TVJM
Tstg
= 300 A;
●
10
9.4
50
mm
mm
m/s2
94
80
72
26
26
15
TVJ = TVJM
VR = 0
Features
Package with screw terminals
Isolation voltage 3000 V~
Planar passivated chips
Blocking voltage up to 1800 V
Low forward voltage drop
UL registered E72873
54
27
6.5
I2t
Maximum Ratings
C ~
D ~
12
E ~
B -
A +
6.5
VRRM
25
66
049
VRSM
1-2
VUO 190
300
A
3000
250
2500
A
105
50Hz, 80% VRRM
I2t
IFSM
IF
200
2000
150
1500
TVJ = 45°C
TVJ = 45°C
1000
100
VR = 0 V
A2s
TVJ = 150°C
TVJ = 150°C
TVJ=150°C
TVJ= 25°C
500
50
0
0.0
0.5
1.0
VF
V
0
0.001
1.5
Fig. 4 Forward current versus voltage
drop per diode
0.01
0.1
t
1
s
104
1
2
3
4 5 6 7 ms
8 910
t
Fig. 6 I2t versus time per diode
Fig. 5 Surge overload current
600
280
A
W
240
Id(AV)M
RthHA :
Ptot
0.1 K/W
0.2 K/W
0.5 K/W
1.0 K/W
1.5 K/W
2.0 K/W
3.0 K/W
400
200
160
120
200
80
40
0
0
0
40
80
120
160
200
240 A 0
20
40
60
Id(AV)M
80 100 120 140 °C
0
Tamb
Fig. 7 Power dissipation versus direct output current and ambient temperature
20 40 60 80 100 120 140 °C
TC
Fig. 8 Max. forward current versus
case temperature
0.5
K/W
ZthJC0.4
0.3
Constants for ZthJC calculation:
0.2
i
1
2
3
4
0.1
0.0
0.001
Rthi (K/W)
ti (s)
0.013
0.072
0.175
0.19
0.0012
0.047
0.326
2.03
VUO 190
0.01
0.1
Fig. 9 Transient thermal impedance junction to case
© 2000 IXYS All rights reserved
10 s
1
t
2-2