VUO 190 IdAV = 248 A VRRM = 800-1800 V Three Phase Rectifier Bridge V V 800 1200 1400 1600 1800 800 1200 1400 1600 1800 VUO 190-08NO7 VUO 190-12NO7 VUO 190-14NO7 VUO 190-16NO7 VUO 190-18NO7* ~ ~ + Type ~ ~ ~ ~ – + * delivery time on request Symbol Test Conditions IdAV IdAV TC = 100°C, module TA = 35°C (RthCA = 0.2 K/W), module IFSM TVJ = 45°C; VR = 0 248 165 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2800 3300 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2500 2750 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 39 200 45 000 A2s A2 s 31 200 31 300 2 As A2 s -40...+150 150 -40...+125 °C °C °C 2500 3000 V~ V~ 5 ± 15 % 5 ± 15 % 270 Nm Nm g t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 50/60 Hz, RMS IISOL ≤ 1 mA Md Weight Mounting torque (M6) Terminal connection torque (M6) typ. Symbol Test Conditions IR VR = VRRM; VR = VRRM; TVJ = 25°C TVJ = TVJM ≤ ≤ 0.3 5 mA mA VF IF TVJ = 25°C ≤ 1.43 V VT0 rT For power-loss calculations only 0.8 2.2 V mΩ RthJC per diode, 120° per module per diode, 120° per module 0.45 0.075 0.6 0.1 K/W K/W K/W K/W dS dA a t = 1 min t=1s ● ● ● Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors ● ● ● Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling ● ● ● Dimensions in mm (1 mm = 0.0394") M6x10 Data according to IEC 60747 and refer to a single diode unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. 3 30 Characteristic Values Creeping distance on surface Creepage distance in air Max. allowable acceleration © 2000 IXYS All rights reserved ● 7 VISOL RthJH ● ● TVJ TVJM Tstg = 300 A; ● 10 9.4 50 mm mm m/s2 94 80 72 26 26 15 TVJ = TVJM VR = 0 Features Package with screw terminals Isolation voltage 3000 V~ Planar passivated chips Blocking voltage up to 1800 V Low forward voltage drop UL registered E72873 54 27 6.5 I2t Maximum Ratings C ~ D ~ 12 E ~ B - A + 6.5 VRRM 25 66 049 VRSM 1-2 VUO 190 300 A 3000 250 2500 A 105 50Hz, 80% VRRM I2t IFSM IF 200 2000 150 1500 TVJ = 45°C TVJ = 45°C 1000 100 VR = 0 V A2s TVJ = 150°C TVJ = 150°C TVJ=150°C TVJ= 25°C 500 50 0 0.0 0.5 1.0 VF V 0 0.001 1.5 Fig. 4 Forward current versus voltage drop per diode 0.01 0.1 t 1 s 104 1 2 3 4 5 6 7 ms 8 910 t Fig. 6 I2t versus time per diode Fig. 5 Surge overload current 600 280 A W 240 Id(AV)M RthHA : Ptot 0.1 K/W 0.2 K/W 0.5 K/W 1.0 K/W 1.5 K/W 2.0 K/W 3.0 K/W 400 200 160 120 200 80 40 0 0 0 40 80 120 160 200 240 A 0 20 40 60 Id(AV)M 80 100 120 140 °C 0 Tamb Fig. 7 Power dissipation versus direct output current and ambient temperature 20 40 60 80 100 120 140 °C TC Fig. 8 Max. forward current versus case temperature 0.5 K/W ZthJC0.4 0.3 Constants for ZthJC calculation: 0.2 i 1 2 3 4 0.1 0.0 0.001 Rthi (K/W) ti (s) 0.013 0.072 0.175 0.19 0.0012 0.047 0.326 2.03 VUO 190 0.01 0.1 Fig. 9 Transient thermal impedance junction to case © 2000 IXYS All rights reserved 10 s 1 t 2-2