IXYS VBO36

VBO 36
Single Phase Rectifier Bridge
VRSM
V
900
1300
1700
1900
VRRM
V
800
1200
1600
1800
IdAV =
30A
VRRM = 800-1800V
­­-
+
Type
VBO 36-08NO8
VBO 36-12NO8
VBO 36-16NO8
VBO 36-18NO8
~
~
~
-
Symbol
Conditions
IdAV
IdAVM
TC = 85°C, module
TC = 62°C, module
IFSM
TVJ = 45°C;
VR = 0
I2t
Maximum Ratings
Features
• Package with ¼" fast-on terminals
•Isolation voltage 3000 V~
•Planar passivated chips
•Blocking voltage up to 1800 V
•Low forward voltage drop
•UL registered E 72873
A
A
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
550
600
A
A
TVJ = TVJM;
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
500
550
A
A
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
1520
1520
A2s
A2s
TVJ = TVJM;
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
1250
1250
As
A2s
-40...+150
150
-40...+150
°C
°C
°C
2500
3000
V~
V~
• Easy to mount with one screw
•Space and weight savings
•Improved temperature & power cycling
2 ±10%
18 ±10%
Nm
lb.in.
Dimensions in mm (1 mm = 0.0394“)
22
g
2
VISOL
50/60 Hz, RMS t = 1 min
IISOL < 1 mA
t=1s
Md
Mounting torque (M5)
(10-32 UNF)
Weight
Typ.
Symbol
Conditions
IR
VR = VRRM TVJ = 25°C
TVJ = TVJM
0.3
2.0
mA
mA
VF
IF = 150 A
TVJ = 25°C
1.7
V
VT0
rt
For power-loss calculations only
0.8
5.8
V
mW
RthJC
per diode; 120° el.
per module
per diode; 120° el.
per module
6.20
1.55
7.40
1.85
K/W
K/W
K/W
K/W
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
12.7
9.4
50
mm
mm
m/s2
dS
dA
a
+
25
30
TVJ
TVJM
Tstg
RthJH
~
• Supplies for DC power equipment
•Input rectifiers for PWM inverter
•Battery DC power supplies
•Field supply for DC motors
Advantages
6.3 x 0.8
Characteristic Values
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© IXYS All rights reserved
Applications
D
B
E
A
20100706b
1-2
VBO 36
1.9
200
104
1.8
IFSM [A]
TVJ = 45°C
150
TVJ = 150°C
480
1.6
500
100
1.2
A2s
IF(OV) / IFSM
IF [A]
1.4
103
45°C
1.0
150°C
0 VRRM
50
0.8
150°C
0.6
25°C
0
0.5
½ VRRM
1
1.5
VF [V]
2
1 VRRM
0.4
100
2.5
Fig. 1Forward current versus
voltage drop per diode
101
t [ms]
102
102
103
Fig. 2Surge overload current per diode IFSM: crest value, t: duration
70
0.36 = RthCA [K/W]
50
65
sin. 180°
rec. 120°
rec. 60°
rec. 30°
20
10
0
10
IFAVM [A]
20
105
2.86
DC
IdAV [A]
30
90
TC [°C]
Ptot [W]
1.43
6
10
DC
75
40
4
t [ms]
sin. 180°
rec. 120°
rec. 60°
rec. 30°
40
0.71
50
2
Fig. 3I2t versus time (1-10 ms)
per diode or thyristor
50
60
1
30
20
120
10
7.14
135
0
50
Tamb
100
[K]
150
150
Fig. 4 Power dissipation vs. direct output current and ambient temperature
0
50
100
150
TC [°C]
200
Fig. 5Maximum forward current
at case temperature
8
ZthJK
Zth [K/W]
6
ZthJC
4
2
0
0.01
0.1
t [s]
1
10
100
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
IXYS reserves the right to change limits, test conditions and dimensions.
© IXYS All rights reserved
20100706b
2-2