VUO 105 IdAVM = 140 A VRRM = 1200-1800 V Three Phase Rectifier Bridge VRSM VRRM V V 1200 1400 1600 1800 1200 1400 1600 1800 + Type ~ VUO 105-12NO7 VUO 105-14NO7 VUO 105-16NO7 VUO 105-18NO7* Test Conditions IdAVM TC = 85°C, module IFSM TVJ = 45°C; VR = 0 + ~ ~ ~ – ~ * delivery time on request Symbol - ~ Maximum Ratings Features Package with screw terminals Isolation voltage 3000 V~ Planar passivated chips Blocking voltage up to 1800 V Low forward voltage drop UL registered E 72873 ● I2t 140 A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1500 1650 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1350 1500 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 11250 11300 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 9120 9350 A2s A2s -40...+150 150 -40...+150 °C °C °C 2500 3000 V~ V~ 5 ± 15 % 44 ± 15 % 5 ± 15 % 44 ± 15 % Nm lb.in. Nm lb.in. 225 g ● ● ● ● ● Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors ● ● TVJ TVJM Tstg ● ● Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling ● ● VISOL 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s Md Mounting torque (M5) Terminal connection torque (M5) Weight typ. Symbol Test Conditions IR VR = VRRM; VR = VRRM; TVJ = 25°C TVJ = TVJM £ £ 0.3 8.0 mA mA VF IF = 150 A; TVJ = 25°C £ 1.6 V VT0 For power-loss calculations only 0.8 V 5 mW ● Dimensions in mm (1 mm = 0.0394") Characteristic Values rT RthJC per diode per module 0.83 0.138 K/W K/W RthJH per diode per module 1.13 0.188 K/W K/W Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 1-2 VUO 105 I2t Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 3 I2t versus time (1-10 ms) per diode Fig. 5 Maximum forward current at case temperature Constants for ZthJC calculation: i Rthi (K/W) 1 2 3 4 0.014 0.067 0.139 0.61 ti (s) 0.011 0.094 0.28 0.7 Constants for ZthJK calculation: i Rthi (K/W) 1 2 3 4 5 0.014 0.067 0.139 0.61 0.3 ti (s) 0.011 0.094 0.28 0.7 4.2 Fig. 6 Transient thermal impedance per diode © 2000 IXYS All rights reserved 2-2