Single Phase Rectifier Bridges PSB 82 IdAVM VRRM = 72A = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type ~ ~ PSB 82/08 PSB 82/12 PSB 82/14 PSB 82/16 PSB 82/18 Symbol Test Conditions IdAVM IFSM TC = 100°C, module TVJ = 45°C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine 72 750 820 A A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 670 740 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2800 2800 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2250 2250 A2 s A2 s -40 ... + 150 150 -40 ... + 125 °C °C °C 2500 3000 V∼ V∼ 5 5 160 Nm Nm g ∫ i2 dt TVJ TVJM Tstg VISOL Md Weight 50/60 HZ, RMS IISOL ≤ 1 mA Maximum Ratings t = 1 min t=1s Mounting torque Terminal connection torque typ. (M5) (M5) Features • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered E 148688 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394“) Symbol Test Conditions Characteristic Value IR VR = VRRM VR = VRRM ≤ ≤ 0.3 5 mA mA VF VTO rT RthJC IF = 150 A TVJ = 25°C For power-loss calculations only TVJ = TVJM ≤ 1.6 0.8 5 V V mΩ per diode; DC current per module 1.1 0.28 K/W K/W RthJK per diode; DC current per module 1.52 0.38 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 10 9.4 50 mm mm m/s2 TVJ = 25°C TVJ = TVJM POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2005 POWERSEM reserves the right to change limits, test conditions and dimensions PSB 82 IF(OV) -----IFSM 200 4 10 2 As IFSM (A) TVJ=45°C TVJ=150°C [A] 750 1.6 670 150 TVJ=45°C 1.4 1.2 100 10 3 TVJ=150°C 1 0 VRRM 0.8 50 Tvj = 150°C IF 0 0.5 1/2 VRRM Tvj = 25°C 1 1.5 VF [V] 0.6 10 0.4 2 0 1 10 Fig. 1 Forward current versus voltage drop per diode 200 [W] 175 1 VRRM 10 2 3 t[ms] 10 2 2 1 10 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 4 t [ms] 6 10 Fig. 3 ∫i2dt versus time (1-10ms) per diode (or thyristor) 95 TC PSB 82 0.35 0.22 = RTHCA [K/W] 0.47 100 105 80 DC [A] sin.180° rec.120° 150 110 125 rec.60° 60 rec.30° 115 0.73 120 100 125 1.23 75 40 130 DC sin.180° rec.120° rec.60° rec.30° 50 25 PVTOT 0 135 2.72 140 145 °C 150 10 30 IFAVM 50 70 0 [A] Tamb 50 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature 20 IdAV 0 50 100 150 200 TC(°C) Fig.5 Maximum forward current at case temperature 2 K/W Z thJK 1.5 Z thJC 1 0.5 Zth 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2005 POWERSEM reserves the right to change limits, test conditions and dimensions