VUO 70 IdAV = 70 A VRRM = 800-1600 V Three Phase Rectifier Bridge VRRM V V 900 1300 1500 1700 800 1200 1400 1600 A Types VUO VUO VUO VUO Symbol Conditions IdAV ① TC = 100°C, module IFSM TVJ = 45°C; VR = 0 I2t E D C 70-08NO7 70-12NO7 70-14NO7 70-16NO7 B Maximum Ratings 70 A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 550 600 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 500 550 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1520 1520 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1250 1250 A2 s A2 s -40...+150 150 -40...+125 °C °C °C 2500 3000 V~ V~ TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque (M5) (10-32 UNF) Weight typ. Symbol Conditions IR VR = VRRM; VR = VRRM; TVJ = 25°C TVJ = TVJM ≤ ≤ 0.5 10 mA mA VF IF TVJ = 25°C ≤ 1.7 V VT0 rT For power-loss calculations only 0.8 8 V mΩ RthJC per per per per 1.45 0.242 1.9 0.317 K/W K/W K/W K/W 16.1 7.5 50 mm mm m/s2 RthJH dS dA a t = 1 min t=1s 5 ± 15 % 44 ± 15 % 110 = 150 A; Nm lb.in. Creeping distance on surface Creepage distance in air Max. allowable acceleration Data according to IEC 60747 refer to a single diode unless otherwise stated ① for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved • • • • • Package with copper base plate Isolation voltage 3000 V~ Planar passivated chips Low forward voltage drop ¼" fast-on power terminals Applications • • • • Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability • Small and light weight g Characteristic Values diode; DC current module diode, DC current module Features Dimensions in mm (1 mm = 0.0394") 316 VRSM 1-2 VUO 70 I F(OV) -----I FSM 30 A TVJ=45°C 25 T=150°C 1.6 20 1.4 15 1.2 4 10 2 As IFSM (A) TVJ=150°C 550 500 10 3 TVJ=45°C TVJ=150°C 1 10 0 V RRM 0.8 5 1/2 V RRM T=25°C IF 0 VF 0.6 V 1 10 2 1 1.5 2 0.4 10 Fig. 1 1 V RRM Forward current versus voltage drop per diode 0 Fig. 2 10 1 t[ms] 10 2 10 4 t [ms] 6 10 3 Surge overload current per diode IFSM: Crest value. t: duration Fig. 3 i2dt versus time (1-10ms) per diode or thyristor 100 200 [W] TC PSD 41 105 0.38 0.26 175 = RTHCA [K/W] 0.51 80 DC [A] sin.180° rec.120° 110 rec.60° 60 150 rec.30° 115 125 0.76 120 40 125 100 1.26 130 75 DC sin.180° rec.120° rec.60° rec.30° 50 25 PVTOT 0 2.76 140 145 IdAV 0 50 °C 40 60 0 [A] 50 100 Tamb 100 150 200 TC(°C) 150 20 IFAVM Fig. 4 20 135 150 [K] Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current at case temperature 3 K/W Z thJK 2 Z thJC 1 Zth Fig. 6 2-2 0.1 t[s] 1 10 Transient thermal impedance per diode or Thyristor, calculated 316 0.01 © 2003 IXYS All rights reserved