MICROSEMI 1N649UR-1

FEATURES
1N649UR-1
• 1N649UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF•
•
•
•
•
19500/240
SILICON
RECTIFIER
METALLURGICALLY BONDED
HERMETICALLY SEALED
DOUBLE PLUG CONSTRUCTION
ALSO AVAILABLE AS LL649, & MLL649
MAXIMUM RATINGS AT 25 °C
Operating Temperature:
Storage Temperature:
Surge Current A, sine 8.3mS:
Total Power Dissipation:
Operating Current:
-65°C to +175°C
-65°C to +175°C
5.0A
500mW
400mA, TA= +25°C
Operating Current:
Derating Factor:
Derating Factor:
150mA, TA= +150°C
2mA/°C above +25°C
6mA/°C above +150°C
D.C. Reverse Voltage (VRWM):
600V
DC ELECTRICAL CHARACTERISTICS
VF
DESIGN DATA
IR
Ambient
(°C)
IF
mA
Min
V
Max
V
Ambient
(°C)
VR
V (dc)
Min
µA
Max
µA
25
150
-55
400
400
400
0.80
0.70
-
1.00
0.95
1.20
25
25
150
600
720(ac)
600
-
0.050
50
25
Case: Hermetically sealed glass package per MILPRF-19500/240 DO-213AA outline
Lead Material: Copper clad steel
AC ELECTRICAL CHARACTERISTICS AT 25°C
Symbol
Min
Max
pF
-
20
Lead Finish: Tin/Lead
Thermal Resistance (RθJEC): 100°C/W maximum
Capacitance @ VR = 4V
Thermal Impedance (ZθJX): 35°C/W maximum
Marking: Blue body coat
Polarity: Cathode end is banded
IRELAND - GORT ROAD, ENNIS, CO. CLARE
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