MICROSEMI 1N647-1

FEATURES
1N647-1
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1N647-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240
SILICON RECTIFIER
METALLURGICALLY BONDED
HERMETICALLY SEALED
DOUBLE PLUG CONSTRUCTION
MAXIMUM RATINGS AT 25 °C
Operating Temperature:
Storage Temperature:
Surge Current A, sine 8.3mS:
Total Power Dissipation:
Operating Current:
-65°C to +175°C
-65°C to +175°C
5.0A
500mW
400mA, TA= +25°C
Operating Current:
Derating Factor:
Derating Factor:
150mA, TA= +150°C
2mA/°C above +25°C
6mA/°C above +150°C
D.C. Reverse Voltage (VRWM):
400V
DC ELECTRICAL CHARACTERISTICS
VF
IR
Ambient
(°C)
IF
mA
Min
V
Max
V
Ambient
(°C)
VR
V (dc)
Min
µA
Max
µA
25
150
-55
400
400
400
0.80
0.70
-
1.00
0.95
1.20
25
25
150
400
480(ac)
400
-
0.050
50
25
DESIGN DATA
Case: Hermetically sealed glass package per MILPRF-19500/240 DO-35 outline
Lead Material: Copper clad steel
Lead Finish: Tin/Lead
Thermal Resistance (RθJL): 250°C/W maximum
at L=.375”
Thermal Impedance (ZθJX): 35°C/W maximum
Marking: Blue body coat, Black digits.
Polarity: Cathode end is banded.
AC ELECTRICAL CHARACTERISTICS AT 25°C
Capacitance @ VR = 4V
Symbol
Min
Max
pF
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20
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