MICROSEMI JANTX

1N6508
JANTX, JANTXV
A Microsemi Company
580 Pleasant St.
Watertown, MA 02472
Phone: 617-924-9280
Fax: 617-924-1235
DIODE ARRAY PRODUCT SPECIFICATION
MONOLITHIC AIR ISOLATED
DIODE ARRAY
12
11
FEATURES:
•
•
•
•
9
QUALIFIED PARTS LISTING: MIL-PRF-19500/474
Bv > 60V at 10uA
Ir < 100nA at 40V
C < 8.0 pF
8
7
5
Absolute Maximum Ratings:
Symbol
Parameter
3
Limit
2
1
Unit
4
VBR(R) *1 *2
IO
*1 * 3
IFSM
*1
PT1
*4
PT2
*4
Top
Tstg
Reverse Breakdown Voltage
Continuous Forward Current
Peak Surge Current (tp= 1/120 s)
Power Dissipation per Junction @ 25°C
Power Dissipation per Package @ 25°C
Operating Junction Temperature Range
Storage Temperature Range
60
300
500
400
600
-65 to +150
-65 to +200
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%
NOTE 3: Derate at 2.4mA/°C above +25 °C
NOTE 4: Derate at 4.0mW/°C above +25 °C
Vdc
mAdc
mAdc
mW
mW
°C
°C
6
10
NOT CONNECTED
.320
.290
.200
.125
.310
.220
.200
MAX
.785
MAX
.070
.030
.098
MAX
.100
BSC
.060
.015
.015
.008
O-15
PACKAGE OUTLINE
Symbol Parameter
Conditions
Vf1
Vf2
IR1
Ct
tfr
trr
If = 100mAdc *1
If = 500mAdc *1
VR = 40 Vdc
VR = 0 Vdc ; f = 1MHz
If = 500mAdc
If = IR = 200mAdc, irr = 20mAdc, RL = 100 ohms
Min
Max
Unit
1
1.5
0.1
8.0
40
20
Vdc
Vdc
uAdc
pF
ns
ns
NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge
Sertech reserves the right to make changes to any product design, specification or other
information at any time without prior notice.
MSC1007.PDF Rev - 11/25/98
.005
MIN
.023
.014
Electrical Characteristics (Per Diode) @
25°C unless otherwise specified
Forward Voltage
Forward Voltage
Reverse Current
Capacitance (pin to pin)
Forward Recovery Time
Reverse Recovery Time
14
13