APT20DC120HJ ISOTOP® SiC Diode Full Bridge Power Module VRRM = 1200V IC = 20A @ Tc = 100°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF ISOTOP® Package (SOT-227) Very low stray inductance High level of integration • • • + ~ ~ Benefits • • • • • • - Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant ISOTOP® Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 10 µs TC = 100°C TC = 25°C Max ratings Unit 1200 V 20 250 A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-3 APT20DC120HJ – Rev 0 Symbol VR VRRM IF(AV) IFSM November, 2009 Absolute maximum ratings APT20DC120HJ All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions VF Diode Forward Voltage IRM Maximum Reverse Leakage Current QC Total Capacitive Charge C Total Capacitance Min Tj = 25°C Tj = 175°C Tj = 25°C VR = 1200V Tj = 175°C IF = 20A, VR = 600V di/dt =1000A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V IF = 20A Typ 1.6 2.3 64 112 Max 1.8 3.0 400 2000 Unit V µA 80 nC 192 138 pF Thermal and package characteristics Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal resistance Junction to Ambient Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -55 Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight Typ Max 0.8 20 Unit °C/W V 175 300 1.5 29.2 °C N.m g SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 0.75 (.030) 0.85 (.033) 25.2 (0.992) 25.4 (1.000) 3.30 (.130) 12.6 (.496) 4.57 (.180) 12.8 (.504) 1.95 (.077) 2.14 (.084) November, 2009 7.8 (.307) 8.2 (.322) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) Dimensions in Millimeters and (Inches) 38.0 (1.496) 38.2 (1.504) www.microsemi.com 2-3 APT20DC120HJ – Rev 0 31.5 (1.240) 31.7 (1.248) APT20DC120HJ Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1 0.8 0.9 0.6 0.7 0.5 0.4 0.3 0.2 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 40 200 IR Reverse Current (µA) IF Forward Current (A) TJ=25°C 30 TJ=75°C 20 TJ=125°C TJ=175°C 10 150 100 TJ=75°C TJ=125°C 50 TJ=175°C TJ=25°C 0 0 0.5 1 1.5 2 2.5 3 3.5 0 400 600 800 1000 1200 1400 1600 VR Reverse Voltage (V) VF Forward Voltage (V) Capacitance vs.Reverse Voltage C, Capacitance (pF) 1400 1200 1000 800 600 400 200 0 1000 November, 2009 10 100 VR Reverse Voltage ISOTOP® is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 3-3 APT20DC120HJ – Rev 0 1