BAS40/-04/-05/-06 SOT-23 SCHOTTKY DIODE FEATURES z Low Forward Voltage Fast Switching z BAS40 MARKING: 43• BAS40-06 MARKING: 46 BAS40-05 MARKING：45 BAS40-04 MARKING：44 Maximum Ratings @TA=25℃ Parameter Symbol Peak repetitive peak reverse voltage VRRM Working peak reverse voltage VRWM Limits Unit 40 V DC Blocking Voltage VR Forward continuous Current IFM 200 mA Power Dissipation PD 200 mW RθJA 625 ℃/W TJ 125 ℃ TSTG -65-125 ℃ Thermal Resistance. Junction to Ambient Air Junction temperature Storage temperature range ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Test V(BR) IR= 10μA Reverse voltage leakage current IR VR=30V 200 Forward voltage VF IF=1mA 380 IF=40mA 1000 Diode capacitance CD Reverse Recovery time t rr Parameter Reverse breakdown voltage conditions VR=0,f=1MHz Irr=1mA, IR=IF=10mA RL=100Ω MIN MAX 40 UNIT V nA mV 5 pF 5 nS １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BAS40/-04/-05/-06 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５