BAW56 CONNECTION DIAGRAMS 3 3 3 A1 2 1 SOT-23 2 1 2 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 70 V IO Average Rectified Current 200 mA IF DC Forward Current 600 mA if Recurrent Peak Forward Current 700 mA if(surge) Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range 1.0 2.0 -55 to +150 A A °C 150 °C Tstg TJ Operating Junction Temperature *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units BAW56 350 2.8 357 mW mW/°C °C/W BAW56 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units BV Breakdown Voltage I R = 5.0 µA IR Reverse Current VF Forward Voltage CO Diode Capacitance VR = 70 V VR = 25 V, TA = 150°C VR = 70 V, TA = 150°C I F = 1.0 mA I F = 10 mA I F = 50 mA I F = 150 mA VR = 0, f = 1.0 MHz 2.5 30 50 715 855 1.0 1.25 2.0 µA µA µA mV mV V V pF TRR Reverse Recovery Time 6.0 nS VFM Peak Forward Voltage I F = IR = 10 mA, IRR = 1.0 mA, RL = 100Ω I F = 10 mA, tr = 20 nS 1.75 V 85 V BAW56 High Conductance Ultra Fast Diode