EFMB101 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION EFMB106 SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere FEATURES * * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.09 gram DO-214AA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) RATINGS SYMBOL EFMB101 EFMB102 EFMB103 EFMB104 EFMB105 EFMB106 UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 300 400 Volts Maximum RMS Volts VRMS 35 70 105 140 210 280 Volts VDC 50 100 150 200 300 400 Volts Maximum DC Blocking Voltage Maximum Average Forward Current at T A = 55 oC IO Peak Forward Surge Current I FM (surge): 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) T J , T STG Amps 30 I FSM CJ Operating and Storage Temperature Range 1.0 15 Amps 10 -65 to + 175 pF 0 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC SYMBOL VF Maximum DC Reverse Current @T A = 25 o C at Rated DC Blocking Voltage @T A =150 o C Maximum Reverse Recovery Time (Note 1) NOTES : 1. Test Conditions: IF=0.5A, I R=1.0A, IRR=0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. IR EFMB101 EFMB102 EFMB103 EFMB104 EFMB105 EFMB106 0.95 1.25 UNITS Volts 5.0 uAmps 50 trr 35 nSec 1998-8 Mounting Pad Layout 0.106 MAX. (2.69 MAX.) 0.083 MIN. (2.10 MIN.) 0.050 MIN. (1.27 MIN.) 0.220 REF Dimensions in inches and (millimeters) RECTRON