SavantIC Semiconductor Product Specification 2N3716 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package APPLICATIONS ·They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A IB Base current 4 A PD Total Power Dissipation 150 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W SavantIC Semiconductor Product Specification 2N3716 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdwon voltage IC=0.2A ;IB=0 VCE(sat) Collector-emitter saturation voltage IC=5A ;IB=0.5A 0.8 V VBE(sat) Base-emitter saturation voltage IC=5A ;IB=0.5A 1.5 V VBE(on) Base-emitter on voltage IC=3A ; VCE=2V 1.5 V ICEX Collector cut-off current VCE=100V; VBE(off)=1.5V TC=150 1.0 10.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 5.0 mA hFE-1 DC current gain IC=1A ; VCE=2V 50 hFE-2 DC current gain IC=3A ; VCE=2V 30 hFE-3 DC current gain IC=10A ; VCE=4V 5 Transition frequency IC=0.5A;VCE=10V 4 fT CONDITIONS 2 MIN TYP. MAX 80 UNIT V 150 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3 2N3716