SavantIC Semiconductor Product Specification 2N6493 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain ·DARLINGTON APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 70 V VEBO Emitter-base voltage Open collector 5 V 15 A 100 W IC Collector current PD Total Power Dissipation Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.75 UNIT /W SavantIC Semiconductor Product Specification 2N6493 Silicon NPN Power Transistors CHARACTERISTICS Tm=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ;IB=0 VCEsat Collector-emitter saturation voltage IC=10A ;IB=100mA 3 V VBEsat Base-emitter saturation voltage IC=10A ;IB=100mA 4 V VBE Base-emitter on voltage IC=4A ; VCE=4V 2.8 V ICEO Collector cut-off current VCE=50V; IB=0 1.0 mA ICEX Collector cut-off current VCE=100V; VBE(off)=-1.5V 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE-1 DC current gain IC=4A ; VCE=4V 500 hFE-2 DC current gain IC=15A ; VCE=4V 100 2 MIN TYP. MAX 70 UNIT V SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3 2N6493