ISC 2N5069

Inchange Semiconductor
Product Specification
2N5067 2N5068 2N5069
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・Complement to type 2N4901/4902/4903
・Low collector saturation voltage
APPLICATIONS
・For general–purpose switching
and power amplifier applications.
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
2N5067
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
2N5068
Open emitter
60
2N5069
80
2N5067
40
2N5068
Emitter-base voltage
UNIT
40
Open base
2N5069
VEBO
VALUE
60
V
V
80
Open collector
5
V
IC
Collector current
5
A
ICM
Collector current-peak
10
A
IB
Base current
1
A
PC
Collector power dissipation
87.5
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
2.0
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N5067 2N5068 2N5069
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N5067
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5068
MIN
TYP.
MAX
UNIT
40
IC=0.2A ;IB=0
2N5069
V
60
80
VCEsat-1
Collector-emitter saturation voltage
IC=1A; IB=0.1A
0.4
V
VCEsat-2
Collector-emitter saturation voltage
IC=5A ;IB=1A
1.5
V
VBE
Base-emitter on voltage
IC=1A ; VCE=2V
1.2
V
ICEO
Collector cut-off current
VCE=Rated VCEO; IB=0
1.0
mA
ICBO
Collector cut-off current
VCB=Rated VCBO; IE=0
0.1
mA
ICEX
Collector cut-off current
VCE= Rated VCEO; VBE(off)=1.5V
TC=150℃
1.0
2.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
hFE-1
DC current gain
IC=1A ; VCE=2V
20
hFE-2
DC current gain
IC=5A ; VCE=2V
7
Transition frequency
IC=1A ; VCE=10V
4
fT
2
80
MHz
Inchange Semiconductor
Product Specification
2N5067 2N5068 2N5069
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3