Inchange Semiconductor Product Specification 2N5067 2N5068 2N5069 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N4901/4902/4903 ・Low collector saturation voltage APPLICATIONS ・For general–purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N5067 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N5068 Open emitter 60 2N5069 80 2N5067 40 2N5068 Emitter-base voltage UNIT 40 Open base 2N5069 VEBO VALUE 60 V V 80 Open collector 5 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 1 A PC Collector power dissipation 87.5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 2.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N5067 2N5068 2N5069 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5067 VCEO(SUS) Collector-emitter sustaining voltage 2N5068 MIN TYP. MAX UNIT 40 IC=0.2A ;IB=0 2N5069 V 60 80 VCEsat-1 Collector-emitter saturation voltage IC=1A; IB=0.1A 0.4 V VCEsat-2 Collector-emitter saturation voltage IC=5A ;IB=1A 1.5 V VBE Base-emitter on voltage IC=1A ; VCE=2V 1.2 V ICEO Collector cut-off current VCE=Rated VCEO; IB=0 1.0 mA ICBO Collector cut-off current VCB=Rated VCBO; IE=0 0.1 mA ICEX Collector cut-off current VCE= Rated VCEO; VBE(off)=1.5V TC=150℃ 1.0 2.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=1A ; VCE=2V 20 hFE-2 DC current gain IC=5A ; VCE=2V 7 Transition frequency IC=1A ; VCE=10V 4 fT 2 80 MHz Inchange Semiconductor Product Specification 2N5067 2N5068 2N5069 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3