SAVANTIC 2N5496

SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5490 2N5492 2N5494 2N5496
DESCRIPTION
·With TO-220 package
·High power dissipation
APPLICATIONS
·For used in medium power and
amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
2N5490/5494
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
2N5492
Open emitter
75
2N5496
90
2N5490/5494
40
2N5492
Emitter-base voltage
UNIT
60
Open base
2N5496
VEBO
VALUE
55
V
V
70
Open collector
5
V
IC
Collector current
7
A
IB
Base current
3
A
PD
Total power dissipation
50
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
MAX
2.5
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5490 2N5492 2N5494 2N5496
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N5490/5494
VCEO(SUS)
Collector-emitter
sustioning voltage
2N5492
VBE
ICEV
Collector-emitter
saturation voltage
TYP.
MAX
IC=0.1A ;IB=0
V
55
70
2N5490
IC=2.0A;IB=0.2A
2N5492
IC=2.5A;IB=0.25A
2N5494
IC=3.0A;IB=0.3A
2N5496
IC=3.5A;IB=0.35A
2N5490
IC=2.0A ; VCE=4V
1.1
2N5492
IC=2.5A ; VCE=4V
1.3
2N5494
IC=3.0A ; VCE=4V
1.5
2N5496
IC=3.5A ; VCE=4V
1.7
2N5492
VCE=70V;VBE=1.5V
2N5490/5494
VCE=55V;VBE=1.5V
2N5496
VCE=85V;VBE=1.5V
1.0
V
V
Base-emitter on voltage
Collector cut-off current
UNIT
40
2N5496
VCEsat
MIN
1.0
mA
ICER
Collector cut-off current
VCE=Rated VCEO;RBE=100>
0.5
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
hFE
fT
2N5490
IC=2.0A ; VCE=4V
2N5492
IC=2.5A ; VCE=4V
2N5494
IC=3.0A ; VCE=4V
2N5496
IC=3.5A ; VCE=4V
20
DC current gain
Transition frequency
IC=0.5A ; VCE=4V
2
0.8
100
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5490 2N5492 2N5494 2N5496
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3