Inchange Semiconductor Product Specification 2N5294 2N5296 2N5298 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High power dissipation APPLICATIONS ・Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 体 导 电半 R O T UC Absolute maximum ratings(Ta=25℃) 固 SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS D N O C I M E Collector-base voltage 2N5294 2N5296 Open emitter NG S A H C IN Collector-emitter voltage Emitter-base voltage 2N5298 2N5294 2N5296 Open base 2N5298 VALUE UNIT 80 60 V 80 70 40 V 60 Open collector 7 V IC Collector current 4 A IB Base current 2 A PT Total power dissipation 36 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 3.47 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification 2N5294 2N5296 2N5298 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2N5294 VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 2N5296 VBE Collector-emitter saturation voltage Base-emitter on voltage ICER IC=0.5A;IB=0.05A 2N5296 IC=1.0A;IB=0.1A 2N5298 IC=1.5A;IB=0.15A 2N5294 IC=0.5A ; VCE=4V 1.1 2N5296 IC=1.0A ; VCE=4V 1.3 2N5298 IC=1.5A ; VCE=4V 1.5 VCE=65V;VBE=1.5V TC=150℃ VCE=35V;VBE=1.5V TC=150℃ VCE=50V;RBE=100Ω TC=150℃ 0.5 3.0 2.0 5.0 0.5 2.0 体 导 电半 2N5296 Collector cut-off current hFE fT ton toff Emitter cut-off current NG S A H C IN DC current gain 2N5296/5298 Turn-off time VEB=7V; IC=0 1.0 R O T DUC 1.0 V V mA mA mA VEB=5V; IC=0 2N5294 IC=0.5A ; VCE=4V 2N5296 IC=1.0A ; VCE=4V 2N5298 Transition frequency Turn-on time N O C EMI 2N5294/5298 2N5294 IEBO V 40 2N5294 Collector cut-off current 固 UNIT 60 2N5294/5298 ICEV MAX 70 2N5298 VCEsat TYP. 30 120 IC=1.5A ; VCE=4V 20 80 IC=0.2A ; VCE=4V 0.8 2N5294 IC=0.5A;IB=0.05A;VCC=30V 2N5296 IC=1.0A;IB=0.1A;VCC=30V 2N5298 IC=1.5A;IB=0.15A;VCC=30V 2N5294 IC=0.5A;IB=0.05A;VCC=30V 2N5296 IC=1.0A;IB=0.1A;VCC=30V 2N5298 IC=1.5A;IB=0.15A;VCC=30V 2 MHz 5.0 μs 15 μs Inchange Semiconductor Product Specification 2N5294 2N5296 2N5298 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 电半 固 N O C EMI INC S G N HA R O T DUC Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3