ISC 2N5295

Inchange Semiconductor
Product Specification
2N5294 2N5296 2N5298
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220 package
・High power dissipation
APPLICATIONS
・Power amplifier and medium speed
switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
体
导
电半
R
O
T
UC
Absolute maximum ratings(Ta=25℃)
固
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
CONDITIONS
D
N
O
C
I
M
E
Collector-base voltage
2N5294
2N5296
Open emitter
NG S
A
H
C
IN
Collector-emitter voltage
Emitter-base voltage
2N5298
2N5294
2N5296
Open base
2N5298
VALUE
UNIT
80
60
V
80
70
40
V
60
Open collector
7
V
IC
Collector current
4
A
IB
Base current
2
A
PT
Total power dissipation
36
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
3.47
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
2N5294 2N5296 2N5298
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2N5294
VCEO(SUS)
Collector-emitter
sustaining voltage
IC=0.1A ;IB=0
2N5296
VBE
Collector-emitter
saturation voltage
Base-emitter on voltage
ICER
IC=0.5A;IB=0.05A
2N5296
IC=1.0A;IB=0.1A
2N5298
IC=1.5A;IB=0.15A
2N5294
IC=0.5A ; VCE=4V
1.1
2N5296
IC=1.0A ; VCE=4V
1.3
2N5298
IC=1.5A ; VCE=4V
1.5
VCE=65V;VBE=1.5V
TC=150℃
VCE=35V;VBE=1.5V
TC=150℃
VCE=50V;RBE=100Ω
TC=150℃
0.5
3.0
2.0
5.0
0.5
2.0
体
导
电半
2N5296
Collector cut-off current
hFE
fT
ton
toff
Emitter cut-off current
NG S
A
H
C
IN
DC current gain
2N5296/5298
Turn-off time
VEB=7V; IC=0
1.0
R
O
T
DUC
1.0
V
V
mA
mA
mA
VEB=5V; IC=0
2N5294
IC=0.5A ; VCE=4V
2N5296
IC=1.0A ; VCE=4V
2N5298
Transition frequency
Turn-on time
N
O
C
EMI
2N5294/5298
2N5294
IEBO
V
40
2N5294
Collector cut-off current
固
UNIT
60
2N5294/5298
ICEV
MAX
70
2N5298
VCEsat
TYP.
30
120
IC=1.5A ; VCE=4V
20
80
IC=0.2A ; VCE=4V
0.8
2N5294
IC=0.5A;IB=0.05A;VCC=30V
2N5296
IC=1.0A;IB=0.1A;VCC=30V
2N5298
IC=1.5A;IB=0.15A;VCC=30V
2N5294
IC=0.5A;IB=0.05A;VCC=30V
2N5296
IC=1.0A;IB=0.1A;VCC=30V
2N5298
IC=1.5A;IB=0.15A;VCC=30V
2
MHz
5.0
μs
15
μs
Inchange Semiconductor
Product Specification
2N5294 2N5296 2N5298
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
电半
固
N
O
C
EMI
INC
S
G
N
HA
R
O
T
DUC
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3