SavantIC Semiconductor Product Specification 2N6098 2N6099 2N6100 2N6101 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High current capability APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2N6098 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N6099 2N6100 Open emitter Emitter-base voltage 70 80 2N6101 80 2N6098 70 2N6099 2N6100 UNIT 70 Open base 2N6101 VEBO VALUE 70 80 V V 80 Open collector 8 V 10 A 75 W IC Collector current PT Total power dissipation Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX UNIT 1.67 /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6098 VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT 70 2N6099 70 IC=0.1A ;IB=0 V 2N6100 80 2N6101 80 VCEsat-1 Collector-emitter saturation voltage IC=5A;IB=0.5A 1.3 V VCEsat-2 Collector-emitter saturation voltage IC=10A;IB=2.5A 3.5 V 1.3 V VBE 2N6098/6099 IC=4A ; VCE=4V 2N6100/6101 IC=5A ; VCE=4V Base-emitter on voltage ICBO Collector cut-off current VCB=Rated VCBO;IE=0 TC=150 0.5 2.0 mA IEBO Emitter cut-off current VEB=8V; IC=0 1.0 mA hFE DC current gain 2N6098/6099 20 2N6100/6101 fT Transition frequency IC=4A ; VCE=4V 80 IC=5A ; VCE=4V IC=1A ; VCE=10V 2 0.8 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3