SAVANTIC 2N6056

SavantIC Semiconductor
Product Specification
2N6055 2N6056
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·DARLINGTON
·Complement to type 2N6053;2N6054
APPLICATIONS
·General-purpose power amplifier and low
frequency swithing applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
2N6055
2N6056
2N6055
2N6056
Open emitter
Open base
Open collector
VALUE
60
80
60
80
UNIT
V
V
5
V
IC
Collector current
8
A
ICM
Collector current-peak
16
A
IB
Base current
120
mA
PD
Total Power Dissipation
100
W
Tj
Junction temperature
200
Tstg
Storage temperature
-65~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.75
UNIT
/W
SavantIC Semiconductor
Product Specification
2N6055 2N6056
Silicon NPN Power Transistors
CHARACTERISTICS
Tm=25
unless otherwise specified
SYMBOL
VCEO(SUS)
PARAMETER
Collector-emitter
sustaining voltage
CONDITIONS
2N6055
MIN
TYP.
MAX
UNIT
60
IC=0.1 A ;IB=0
V
80
2N6056
VCEsat-1
Collector-emitter saturation voltge
IC=4A ;IB=16mA
2.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=8A ;IB=80mA
3.0
V
Base-emitter saturation voltage
IC=8A ;IB=80mA
4.0
V
VBE
Base-emitter on voltage
IC=4A ; VCE=3V
2.8
V
ICEO
Collector cut-off current
0.5
mA
VBEsat
2N6055
ICEX
VCE=30V; IB=0
2N6056
VCE=40V; IB=0
2N6055
VCE=60V; VBE(off)=1.5V
TC=150
0.5
5.0
2N6056
VCE=80V; VBE(off)=1.5V
TC=150
0.5
5.0
2.0
Collector cut-off current
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=4A ; VCE=3V
750
hFE-2
DC current gain
IC=8A ; VCE=3V
100
Cob
Output capacitance
IE=0;VCB=10V;f=0.1MHz
2
mA
mA
18000
220
pF
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
2N6055 2N6056