Inchange Semiconductor Product Specification 2N6282 2N6283 2N6284 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6285/6286/6287 ・High DC current gain ・DARLINGTON APPLICATIONS ・For use in general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 体 导 电半 Absolute maximum ratings(Ta=℃) 固 SYMBOL VCBO VCEO VEBO PARAMETER D N O C I M E 2N6282 Collector-base voltage IN 2N6283 Open emitter NG S CHA Collector-emitter voltage R O T UC CONDITIONS 2N6284 2N6282 2N6283 Open base 2N6284 Emitter-base voltage VALUE UNIT 60 80 V 100 60 80 V 100 Open collector 5 V IC Collector current 20 A ICM Collector current-peak 40 A IB Base current 0.5 A PD Total Power Dissipation 160 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.09 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6282 2N6283 2N6284 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6282 VCEO(SUS) Collector-emitter sustaining voltage 2N6283 MIN TYP. MAX UNIT 60 IC=0.2A ;IB=0 2N6284 V 80 100 VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=40mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=20A ;IB=200mA 3.0 V Base-emitter saturation voltage IC=20A ;IB=200mA 4.0 V Base-emitter on voltage IC=10A ; VCE=3V 2.8 V VBEsat VBE ICEO ICEX 体 导 电半 固 Collector cut-off current 2N6282 VCE=30V; IB=0 2N6283 VCE=40V; IB=0 2N6284 VCE=50V; IB=0 R O T UC D N O C I M E S G N HA INC Collector cut-off current 1.0 2N6282 VCE=60V; VBE=-1.5V TC=150℃ 0.5 5.0 2N6283 VCE=80V; VBE=-1.5V TC=150℃ 0.5 5.0 2N6284 VCE=100V; VBE=-1.5V TC=150℃ 0.5 5.0 2.0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=10A ; VCE=3V 750 hFE-2 DC current gain IC=20A ; VCE=3V 100 COB Output capacitance IE=0; VCB=10V;f=1MHz 2 mA mA mA 18000 400 pF Inchange Semiconductor Product Specification 2N6282 2N6283 2N6284 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 电半 固 N O C EMI INC S G N HA R O T DUC Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3