ISC 2N6283

Inchange Semiconductor
Product Specification
2N6282 2N6283 2N6284
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・Complement to type 2N6285/6286/6287
・High DC current gain
・DARLINGTON
APPLICATIONS
・For use in general-purpose amplifier and
low-frequency switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
体
导
电半
Absolute maximum ratings(Ta=℃)
固
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
D
N
O
C
I
M
E
2N6282
Collector-base voltage
IN
2N6283
Open emitter
NG S
CHA
Collector-emitter voltage
R
O
T
UC
CONDITIONS
2N6284
2N6282
2N6283
Open base
2N6284
Emitter-base voltage
VALUE
UNIT
60
80
V
100
60
80
V
100
Open collector
5
V
IC
Collector current
20
A
ICM
Collector current-peak
40
A
IB
Base current
0.5
A
PD
Total Power Dissipation
160
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.09
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N6282 2N6283 2N6284
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6282
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6283
MIN
TYP.
MAX
UNIT
60
IC=0.2A ;IB=0
2N6284
V
80
100
VCEsat-1
Collector-emitter saturation voltage
IC=10A; IB=40mA
2.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=20A ;IB=200mA
3.0
V
Base-emitter saturation voltage
IC=20A ;IB=200mA
4.0
V
Base-emitter on voltage
IC=10A ; VCE=3V
2.8
V
VBEsat
VBE
ICEO
ICEX
体
导
电半
固
Collector cut-off current
2N6282
VCE=30V; IB=0
2N6283
VCE=40V; IB=0
2N6284
VCE=50V; IB=0
R
O
T
UC
D
N
O
C
I
M
E
S
G
N
HA
INC
Collector cut-off current
1.0
2N6282
VCE=60V; VBE=-1.5V
TC=150℃
0.5
5.0
2N6283
VCE=80V; VBE=-1.5V
TC=150℃
0.5
5.0
2N6284
VCE=100V; VBE=-1.5V
TC=150℃
0.5
5.0
2.0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=10A ; VCE=3V
750
hFE-2
DC current gain
IC=20A ; VCE=3V
100
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
2
mA
mA
mA
18000
400
pF
Inchange Semiconductor
Product Specification
2N6282 2N6283 2N6284
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
电半
固
N
O
C
EMI
INC
S
G
N
HA
R
O
T
DUC
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3