Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6300 2N6301 DESCRIPTION ·With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6298/6299 APPLICATIONS ·General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2N6300 VCBO Collector-base voltage 60 Open base 2N6301 VEBO V 80 2N6300 Collector-emitter voltage Emitter-base voltage UNIT 60 Open emitter 2N6301 VCEO VALUE V 80 Open collector 5 V IC Collector current 8 A ICM Collector current-peak 16 A IB Base current 0.12 A PT Total power dissipation 75 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 2.33 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6300 2N6301 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6300 VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT 60 IC=0.1A ; IB=0 2N6301 V 80 VCEsat-1 Collector-emitter saturation voltage IC=4A; IB=16mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=8A; IB=80mA 3.0 V Base-emitter saturation voltage IC=8A; IB=80mA 4.0 V Base -emitter on voltage IC=4A ; VCE=3V 2.8 V 2N6300 VCE=60V; VBE(off)=1.5V TC=150℃ 0.5 5.0 2N6301 VCE=80V; VBE(off)=1.5V TC=150℃ 0.5 5.0 2N6300 VCE=30V; IB=0 2N6301 VCE=40V; IB=0 VBEsat VBE ICEX ICEO Collector cut-off current mA Collector cut-off current IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=4A ; VCE=3V 750 hFE-2 DC current gain IC=8A ; VCE=3V 100 COB Output capacitance IE=0 ; VCB=10V;f=0.1MHz 2 0.5 mA 2.0 mA 18000 200 pF Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6300 2N6301 PACKAGE OUTLINE Fig.2 Outline dimensions 3