ISC 2N6285

Inchange Semiconductor
Product Specification
2N6285 2N6286 2N6287
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3 package
・Complement to type 2N6282/6283/6284
・High DC current gain
・DARLINGTON
APPLICATIONS
・For use in general-purpose amplifier and
low-frequency switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
导体
半
电
TOR
Absolute maximum ratings(Ta=℃)
固
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
2N6285
Collector-base voltage
IN
Collector-emitter voltage
2N6286
EMIC
Open emitter
GE S
N
A
H
C
C
U
D
ON
CONDITIONS
2N6287
2N6285
2N6286
Open base
2N6287
Emitter-base voltage
VALUE
UNIT
-60
-80
V
-100
-60
-80
V
-100
Open collector
-5
V
IC
Collector current
-20
A
ICM
Collector current-peak
-40
A
IB
Base current
-0.5
A
PD
Total Power Dissipation
160
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.09
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N6285 2N6286 2N6287
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6285
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6286
MIN
TYP.
MAX
UNIT
-60
IC=-0.2A ;IB=0
V
-80
2N6287
-100
VCEsat-1
Collector-emitter saturation voltage
IC=-10A; IB=-40mA
-2.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=-20A ;IB=-200mA
-3.0
V
Base-emitter saturation voltage
IC=-20A ;IB=-200mA
-4.0
V
Base-emitter on voltage
IC=-10A ; VCE=-3V
-2.8
V
VBEsat
VBE
ICEO
体
半导
固电
Collector cut-off current
2N6285
VCE=-30V; IB=0
2N6286
VCE=-40V; IB=0
N
A
H
INC
Collector cut-off current
D
N
O
IC
M
E
S
GE
2N6287
ICEX
R
O
T
UC
VCE=-50V; IB=0
-1.0
2N6285
VCE=-60V; VBE=-1.5V
TC=150℃
-0.5
-5.0
2N6286
VCE=-80V; VBE=-1.5V
TC=150℃
-0.5
-5.0
2N6287
VCE=-100V; VBE=-1.5V
TC=150℃
-0.5
-5.0
-2.0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-10A ; VCE=-3V
750
hFE-2
DC current gain
IC=-20A ; VCE=-3V
100
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
2
mA
mA
mA
18000
600
pF
Inchange Semiconductor
Product Specification
2N6285 2N6286 2N6287
Silicon PNP Power Transistors
PACKAGE OUTLINE
导体
半
电
固
R
O
T
UC
D
N
O
IC
M
E
S
GE
N
A
H
INC
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3