SavantIC Semiconductor Product Specification 2N6132 2N6133 2N6134 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·High power dissipation ·Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS ·Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2N6132 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N6133 Open emitter Emitter-base voltage -60 2N6134 -80 2N6132 -40 2N6133 UNIT -40 Open base 2N6134 VEBO VALUE -60 V V -80 Open collector -5 V IC Collector current -7 A IB Base current -3 A PT Total power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.5 UNIT /W SavantIC Semiconductor Product Specification 2N6132 2N6133 2N6134 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6132 VCEO(SUS) Collector-emitter sustaining voltage 2N6133 MIN TYP. MAX UNIT -40 IC=-0.1A ;IB=0 V -60 -80 2N6134 2N6132 VCEsat Collector-emitter saturation voltage -1.4 2N6133 IC=-7A;IB=-1.2A V -1.8 2N6134 VBE ICEV Base-emitter on voltage Collector cut-off current IC=-2.5A ; VCE=-4V -1.4 2N6132 VCE=-40V;VBE=1.5V TC=150 -0.5 -3.0 2N6133 VCE=-60V;VBE=1.5V TC=150 -0.5 -3.0 2N6134 VCE=-80V; VBE=1.5V TC=150 -0.5 -3.0 mA -1.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 hFE DC current gain IC=-2.5A ; VCE=-4V 20 Transition frequency IC=-0.2A ; VCE=-4V 2.5 fT 2 V mA 100 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N6132 2N6133 2N6134 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3