SavantIC Semiconductor Product Specification 2N6357 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High DC current gain ·DARLINGTON APPLICATIONS ·For general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 20 A IB Base current 0.5 A PD Total Power Dissipation 150 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.09 UNIT /W SavantIC Semiconductor Product Specification 2N6357 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN V(BR)CEO Collector-emitter breakdwon voltage IC=0.2A ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=10A ;IB=40mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=20A ;IB=1A 4.0 V VBE sat Base-emitter saturation voltage IC=20A ;IB=1A 4.0 V VBE Base-emitter on voltage IC=10A ; VCE=4V 2.8 V ICEO Collector cut-off current MAX 1.0 mA ICBO Collector cut-off current VCB=80V; IE=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 5.0 mA hFE-1 DC current gain IC=4A ; VCE=5V 500 hFE-2 DC current gain IC=20A ; VCE=5V 100 60 VCE=60V;IB=0 2 TYP. UNIT V 5000 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3 2N6357