SAVANTIC 2N5973

SavantIC Semiconductor
Product Specification
2N5973
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High power dissipations
APPLICATIONS
·Designed for general-purpose power
amplifier and switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
120
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
15
A
ICM
Collector current-peak
30
A
IB
Base current
5
A
PD
Total Power Dissipation
150
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.1
UNIT
/W
SavantIC Semiconductor
Product Specification
2N5973
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEO(SUS)
PARAMETER
CONDITIONS
MIN
TYP.
MAX
Collector-emitter sustaining voltage
IC=0.1A ;IB=0
VCEsat-1
Collector-emitter saturation voltge
IC=7A ;IB=0.7A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=15A; IB=3.75A
4.0
V
Base-emitter saturation voltage
IC=15A; IB=3.75A
2.5
V
ICEO
Collector cut-off current
VCE=30V; IB=0
1.0
mA
ICEV
Collector cut-off current
VCE=120V; VBE(off)=1.5V
TC=150
0.5
5.0
mA
ICBO
Collector cut-off current
VCB=120V; IE=0
0.5
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
hFE-1
DC current gain
IC=5A ; VCE=1.5V
25
hFE-2
DC current gain
IC=15A ; VCE=4V
4
Transition frequency
IC=1A;VCE=10V
4
VBEsat
fT
2
100
UNIT
V
75
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
2N5973