SavantIC Semiconductor Product Specification 2N6533 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·DARLINGTON ·High DC current gain APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A ICM Collector current-Peak 15 A IB Base current 0.25 A PT Total power dissipation 65 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL R9JC PARAMETER Thermal resistance junction to case VALUE 1.92 UNIT /W SavantIC Semiconductor Product Specification 2N6533 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=3A ;IB=6mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=8A; IB=80mA 3.0 V VBE-1 Base -emitter on voltage IC=3A ; VCE=3V 2.8 V VBE-2 Base -emitter on voltage IC=8A ; VCE=3V 4.5 V ICEV Collector cut-off current VCE=120V; VBE=-1.5V TC=125 0.5 5.0 mA ICEO Collector cut-off current VCE=120V; IB=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 5.0 mA hFE-1 DC current gain IC=3A ; VCE=3V 1000 10000 hFE-2 DC current gain IC=8A ; VCE=3V 100 5000 Diode forward voltage IF=5A VF CONDITIONS MIN TYP. MAX 120 V 4.0 2 UNIT V SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 2N6533