SAVANTIC 2N6533

SavantIC Semiconductor
Product Specification
2N6533
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·DARLINGTON
·High DC current gain
APPLICATIONS
·Power switching
·Hammer drivers
·Series and shunt regulators
·Audio amplifiers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
120
V
VCEO
Collector-emitter voltage
Open base
120
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
8
A
ICM
Collector current-Peak
15
A
IB
Base current
0.25
A
PT
Total power dissipation
65
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
R9JC
PARAMETER
Thermal resistance junction to case
VALUE
1.92
UNIT
/W
SavantIC Semiconductor
Product Specification
2N6533
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ; IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=3A ;IB=6mA
2.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=8A; IB=80mA
3.0
V
VBE-1
Base -emitter on voltage
IC=3A ; VCE=3V
2.8
V
VBE-2
Base -emitter on voltage
IC=8A ; VCE=3V
4.5
V
ICEV
Collector cut-off current
VCE=120V; VBE=-1.5V
TC=125
0.5
5.0
mA
ICEO
Collector cut-off current
VCE=120V; IB=0
1.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
5.0
mA
hFE-1
DC current gain
IC=3A ; VCE=3V
1000
10000
hFE-2
DC current gain
IC=8A ; VCE=3V
100
5000
Diode forward voltage
IF=5A
VF
CONDITIONS
MIN
TYP.
MAX
120
V
4.0
2
UNIT
V
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
2N6533