SavantIC Semiconductor Product Specification 2N6477 2N6478 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·High voltage ratings ·Excellent safe operating area APPLICATIONS ·Series and shunt regulators ·High-fidelity amplifiers ·Power switching circuits ·Solenoid drivers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2N6477 VCBO Collector-base voltage 120 Open base 2N6478 VEBO Emitter-base voltage V 160 2N6477 Collector-emitter voltage UNIT 140 Open emitter 2N6478 VCEO VALUE V 140 Open collector 5 V 2.5 A IC Collector current ICM Collector current-peak 4 A IB Base current 1 A PT Total power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.5 UNIT /W SavantIC Semiconductor Product Specification 2N6477 2N6478 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS 2N6477 MIN TYP. MAX UNIT 120 V IC=0.1A ;IB=0 140 2N6478 VCEsat-1 Collector-emitter saturation voltage IC=1.0A;IB=0.1A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=2.5A;IB=0.5A 2.0 V VBE-1 Base-emitter on voltage IC=1.0A ; VCE=4V 1.8 V VBE-2 Base-emitter on voltage IC=2.5A ; VCE=4V 3.0 V 2N6477 VCE=130V VCE=120V; TC=150 2.0 10 2N6478 VCE=150V VCE=140V; TC=150 2.0 10 2N6477 VCE=80V;IB=0 ICEX ICEO Collector cut-off current VBE=-1.5V Collector cut-off current 2N6478 mA 2.0 mA 2.0 mA VCE=100V;IB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=1.0A ; VCE=4V 25 hFE-2 DC current gain IC=2.5A ; VCE=4V 5 COB Output capacitance IE=0 ; VCB=10V;f=1MHz fT Transition frequency IC=0.5A ; VCE=4V 2 150 250 0.2 pF MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 2N6477 2N6478