SavantIC Semiconductor Product Specification BDV65/65A/65B/65C Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BDV64/64A/64B/64C ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in general purpose amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS BDV65 VCBO VCEO VEBO Collector-base voltage Collector-emitter voltage Emitter-base voltage BDV65A VALUE 60 Open emitter 80 BDV65B 100 BDV65C 120 BDV65 60 BDV65A UNIT Open base 80 BDV65B 100 BDV65C 120 Open collector V V 5 V IC Collector current 12 A ICM Collector current-peak 15 A IB Base current 0.5 A PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 125 Ta=25 3.5 W SavantIC Semiconductor Product Specification BDV65/65A/65B/65C Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS BDV65 V(BR)CEO VCEsat VBE ICBO ICEO Collector-emitter breakdown voltage MIN TYP. MAX UNIT 60 BDV65A 80 IC=30mA, IB=0 V BDV65B 100 BDV65C 120 Collector-emitter saturation voltage IC=5A ,IB=20mA 2.0 V Base-emitter on voltage IC=5A ; VCE=4V 2.5 V BDV65 VCB=60V, IE=0 VCB=30V, IE=0;TC=150 0.4 2.0 BDV65A VCB=80V, IE=0 VCB=40V, IE=0;TC=150 0.4 2.0 BDV65B VCB=100V, IE=0 VCB=50V, IE=0;TC=150 0.4 2.0 BDV65C VCB=120V, IE=0 VCB=60V, IE=0;TC=150 0.4 2.0 BDV65 VCE=30V, IB=0 BDV65A VCE=40V, IB=0 BDV65B VCE=50V, IB=0 BDV65C VCE=60V, IB=0 Collector cut-off current Collector cut-off current IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=5A ; VCE=4V VEC Diode forward voltage IE=10A mA 2 mA 5 mA 3.5 V 1000 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.0 2 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDV65/65A/65B/65C PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.1mm) 3