SavantIC Semiconductor Product Specification BUX37 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage ·DARLINGTON APPLICATIONS ·Power switching ·Automotive ignition ·Solenoid drivers ·Series and shunt regulators. PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage Open emitter VEBO Emitter-base voltage Open collector VALUE UNIT 400 V 7 V IC Collector current 15 A IB Base current 4 A PT Total power dissipation 35 W Tj Junction temperature -65~150 Tstg Storage temperature -65~150 TC1100 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.5 UNIT /W SavantIC Semiconductor Product Specification BUX37 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 400 V V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0 7 V VCEsat-1 Collector-emitter saturation voltage IC=7 A;IB=0.07 A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=10 A;IB=0.15A 2.0 V Base-emitter saturation voltage IC=10 A;IB=0.15A 2.7 V ICBO Collector cut-off current VCB=400V;IE=0 0.1 mA ICEO Collector cut-off current VCE=400V;IB=0 0.25 mA hFE-1 DC current gain IC=8A ; VCE=5V 100 hFE-2 DC current gain IC=15A ; VCE=5V 20 VBEsat CONDITIONS 2 MIN TYP. MAX UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BUX37