SavantIC Semiconductor Product Specification 2SA1276 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC3230 ·Good linearity of hFE APPLICATIONS ·General purpose applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -30 V VCEO Collector-emitter voltage Open base -30 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -3 A IE Emitter current 3 A PC Collector power dissipation 10 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SA1276 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,IB=0 -30 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ,IC=0 -5 V Collector-emitter saturation voltage IC=-2A; IB=-0.2A -0.3 -0.8 V VBE Base-emitter voltage IC=-0.5A ; VCE=-2V -0.75 -1.0 V ICBO Collector cut-off current VCB=-20V; IE=0 -1.0 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 µA hFE-1 DC current gain IC=-0.5A ; VCE=-2V 70 hFE-2 DC current gain IC=-2.5A ; VCE=-2V 25 fT Transition frequency IC=-0.5A ; VCE=-2V 100 MHz Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 40 pF VCEsat CONDITIONS hFE-1 Classifications O Y 70-140 120-240 2 MIN TYP. MAX UNIT 240 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 2SA1276 SavantIC Semiconductor Product Specification 2SA1276 Silicon Power Transistors 4 SavantIC Semiconductor Product Specification Silicon Power Transistors 5 2SA1276