SAVANTIC 2SB1368

SavantIC Semiconductor
Product Specification
2SB1368
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220F package
·Complement to type 2SD2060
·Low collector saturation voltage:
VCE(SAT)=-1.7V(Max) at IC=-3A,IB=-0.3A
·Collector power dissipation:
PC=25W(TC=25 )
APPLICATIONS
·With general purpose applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-80
V
VCEO
Collector-emitter voltage
Open base
-80
V
VEBO
Emitter-base voltage
Open collector
-5
V
-4
A
-0.4
A
IC
Collector current
IB
Base current
PC
Collector dissipation
Ta=25
2.0
TC=25
25
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SB1368
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-3A ;IB=-0.3A
-1.0
-1.7
V
VBE
Base-emitter on voltage
IC=-3A;VCE=-5V
-1.0
-1.5
V
ICBO
Collector cut-off current
VCB=-80V; IE=0
-30
µA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-100
µA
hFE-1
DC current gain
IC=-0.5A ; VCE=-5V
40
hFE-2
DC current gain
IC=-3A ; VCE=-5V
15
Transition frequency
IC=-0.5A ; VCE=-5V
9.0
MHz
Collector output capacitance
f=1MHz;VCB=10V
130
pF
fT
COB
CONDITIONS
hFE-1 Classifications
R
O
Y
40-80
70-140
120-240
2
MIN
TYP.
MAX
-80
UNIT
V
240
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SB1368
SavantIC Semiconductor
Product Specification
2SB1368
Silicon PNP Power Transistors
4