SAVANTIC 2SA740

SavantIC Semiconductor
Product Specification
2SA740
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·Complement to type 2SC1448
APPLICATIONS
·Power amplifier applications
·Vertical output applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-150
V
VCEO
Collector-emitter voltage
Open base
-150
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-1.5
A
IE
Emitter current
1.5
A
PC
Collector power dissipation
Ta=25
1.5
W
TC=25
25
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SA740
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ,IB=0
VCEsat
Collector-emitter saturation voltage
IC=-500mA; IB=-50mA
-1.5
V
VBE
Base-emitter on voltage
IC=-500mA ; VCE=-10V
-1.0
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-20
µA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
µA
hFE
DC current gain
IC=-500mA ; VCE=-10V
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
90
pF
fT
Transition frequency
IC=-500mA ; VCE=-10V
8
MHz
2
MIN
TYP.
MAX
-150
UNIT
V
40
140
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
2SA740