SavantIC Semiconductor Product Specification 2SA1280 Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·High breakdown voltage ·High power dissipation APPLICATIONS ·For use in low frequency power amplifier Color TV vertical deflection output PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -6 V -1.5 A 25 W IC Collector current PC Collector dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SA1280 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=-500mA;IB=-50mA -3.0 V VBE Base-emitter on voltage IC=-50mA ; VCE=-4V -1.0 V ICBO Collector cut-off current VCB=-120V;IE=0 -1 µA IEBO Emitter cut-off current VEB=-6V; IC=0 -1 µA hFE-1 DC current gain IC=-50mA ; VCE=-4V 60 hFE-2 DC current gain IC=-500mA ; VCE=-10V 60 fT Transition frequency IC=-500mA ; VCE=-10V 4 COB Output capacitance IE=0 ; VCB=-100V;f=1MHz 2 MIN TYP. MAX -150 UNIT V 200 MHz 30 pF SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SA1280