SavantIC Semiconductor Product Specification 2SB1342 Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·For low frequency power amplifier and power driver applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector -emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -4 A ICM Collector current-peak -6 A PC Collector power dissipation Ta=25 2 TC=25 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1342 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0 -80 V V(BR)CBO Collector-base breakdown voltage IC=-50µA; IE=0 -80 V VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-4mA ICBO Collector cut-off current IEBO hFE UNIT -1.5 V VCB=-80V; IE=0 -100 µA Emitter cut-off current VEB=-5V; IC=0 -3.0 mA DC current gain IC=-2A ; VCE=-3V fT Transition frequency IC=-0.5A ; VCE=-5V 12 MHz COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 45 pF 2 -1.0 MAX 1000 10000 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 2SB1342