SavantIC Semiconductor Product Specification 2SB1286 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SD1646 ·DARLINGTON ·High DC current gain APPLICATIONS ·For low frequency power amplifier and power driver applications PINNING PIN DESCRIPTION 1 Base 2 Collector; connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -7 V -2 A 25 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SB1286 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-10mA,IB=0 -100 V V(BR)CBO Collector-base breakdown voltage IC=-1mA,IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-5mA, IC=0 -7 V VCEsat Collector-emitter saturation voltage IC=-1A ,IB=-1mA -1.5 V VBEsat Base-emitter saturation voltage IC=-1A ,IB=-1mA -2.0 V ICBO Collector cut-off current VCB=-100V, IE=0 -10 µA ICEO Collector cut-off current VCE=-100V, IB=0 -100 µA IEBO Emitter cut-off current VEB=-7V, IC=0 -5 mA hFE DC current gain IC=-1A ; VCE=-2V 2 MIN 1000 TYP. MAX 10000 UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SB1286