SAVANTIC 2SB1009

SavantIC Semiconductor
Product Specification
2SB1009
Silicon PNP Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2SD1380
APPLICATIONS
·For use in low frequency power
amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-40
V
VCEO
Collector-emitter voltage
Open base
-32
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current (DC)
-2
A
PD
Total power dissipation
Ta=25
0.1
W
TC=25
10
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SB1009
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-2.0A; IB=-0.2A
-0.8
V
VBEsat
Base-emitter saturation voltage
IC=-2.0A ;IB=-0.2A
-2.0
V
ICBO
Collector cut-off current
VCB=-20V; IE=0
-1
µA
IEBO
Emitter cut-off current
VEB=-3V; IC=0
-1
µA
hFE-1
DC current gain
IC=-20mA ; VCE=-5V
40
hFE-2
DC current gain
IC=-500mA ; VCE=-5V
82
Transition frequency
IC=-500mA ; VCE=-5V
100
MHz
Collector output capacitance
f=1MHz ; VCB=-10V
50
pF
fT
COB
CONDITIONS
2
MIN
TYP.
MAX
-32
UNIT
V
390
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SB1009