SavantIC Semiconductor Product Specification 2SB1293 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·Complement to type 2SD1896 ·Wide area of safe operation APPLICATIONS ·For use in low frequency power amplifier applications,power drivers and DC-DC converters PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector -emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -5 A ICM Collector current-peak -10 A PC Collector power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SB1293 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0 -100 V V(BR)CBO Collector-base breakdown voltage IC=-50µA; IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-50µA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-0.3A -1.0 V VBEsat Base-emitter saturation voltage IC=-3A ;IB=-0.3A -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-4V; IC=0 -10 µA hFE DC current gain IC=-1A ; VCE=-5V fT Transition frequency IE=-0.5A ; VCE=-5V 12 MHz COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 120 pF hFE Classifications D E F 60-120 100-200 160-320 2 MIN TYP. 60 MAX UNIT 320 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.10 mm) 3 2SB1293