SavantIC Semiconductor Product Specification 2SD2061 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Excellent DC current gain characteristics ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 3 A ICM Collector current-Peak 6 A PC Collector power dissipation TC=25 30 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD2061 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=1mA , IB=0 60 V V(BR)CBO Collector-base breakdown voltage IC=50µA , IE=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=50µA , IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A 1.0 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.2A 1.5 V ICBO Collector cut-off current VCB=60V IE=0 10 µA IEBO Emitter cut-off current VEB=4V; IC=0 10 µA hFE DC current gain IC=0.5A ; VCE=5V fT Transition frequency IC=0.5A ; VCE=5V;f=5MHz 8 MHz Cob Output capacitance IE=0 ; VCB=10V ,f=1MHz 70 pF hFE Classifications E F 100-200 160-320 2 MIN TYP. 100 MAX UNIT 320 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 2SD2061