SAVANTIC 2SB514

SavantIC Semiconductor
Product Specification
2SB514
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type 2SD330
·Low collector saturation voltage
APPLICATIONS
·Suited for use in output stage of 10W
AF power amplifier
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-50
V
VCEO
Collector-emitter voltage
Open base
-50
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current (DC)
-2
A
ICM
Collector current-Peak
-5
A
PC
Collector dissipation
Ta=25
1.75
TC=25
20
W
Tj
Junction temperature
150
Tstg
Storage temperature
-50~150
SavantIC Semiconductor
Product Specification
2SB514
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO
Collector-emitter voltage
IC=-10mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-2A; IB=-0.2A
-1.0
V
VBE
Base-emitter on voltage
IC=-1A ; VCE=-5V
-1.5
V
ICBO
Collector cut-off current
VCB=-20V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-1.0
mA
hFE-1
DC current gain
IC=-1A ; VCE=-2V
40
hFE-2
DC current gain
IC=-0.1A ; VCE=-2V
35
Transition frequency
IC=-0.5A ; VCE=-5V
fT
hFE-1Classifications
C
D
E
F
40-80
60-120
100-200
160-320
2
-50
UNIT
V
320
8
MHz
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
2SB514