SavantIC Semiconductor Product Specification 2SB1556 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SD2385 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -140 V VCEO Collector-emitter voltage Open base -140 V VEBO Emitter-base voltage Open collector -5 V -8 A -0.1 A 120 W IC Collector current IB Base current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SB1556 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-7A ;IB=-7mA -2.5 V VBE Base-emitter voltage IC=-7A ; VCE=-5V -3.0 V ICBO Collector cut-off current VCB=-140V; IE=0 -5.0 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -5.0 µA hFE-1 DC current gain IC=-7A ; VCE=-5V 5000 hFE-2 DC current gain IC=-12A ; VCE=-5V 2000 COB Collector output capacitance IE=0 ; VCB=-10V f=1MHz 170 pF Transition frequency IC=-1A ; VCE=-5V 30 MHz fT CONDITIONS hFE-2 classifications A B C 5000-12000 9000-18000 15000-30000 2 MIN TYP. MAX -140 UNIT V 30000 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3 2SB1556