SavantIC Semiconductor Product Specification 2SC3012 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1232 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 130 V VCEO Collector-emitter voltage Open base 130 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A ICM Collector current-peak 15 A PC Collector power dissipation 100 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC3012 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat CONDITIONS TYP. MAX UNIT IC=5A; IB=0.5A 0.6 1.5 V Base-emitter saturation voltage IC=5A; IB=0.5A 1.3 2.0 V ICBO Collector cut-off current VCB=130V; IE=0 50 µA IEBO Emitter cut-off current VEB=3V; IC=0 50 µA hFE-1 DC current gain IC=2A ; VCE=5V 60 hFE-2 DC current gain IC=5A ; VCE=5V 40 Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 150 pF fT Transition frequency IC=1A ; VCE=5V 60 MHz hFE-1 Classifications R Q P 60-120 100-200 160-320 2 MIN 320 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SC3012