SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB632 2SB632K DESCRIPTION ·With TO-126 package ·Complement to type 2SD612/612K ·High collector dissipation ·Wide ASO(Safe Operating Area) APPLICATIONS ·25V/35V, 2A low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SB632 VCBO Collector-base voltage -25 Open base 2SB632K VEBO Emitter-base voltage IC V -35 2SB632 Collector-emitter voltage UNIT -25 Open emitter 2SB632K VCEO VALUE V -35 Open collector -5 V Collector current (DC) -2 A ICM Collector current-Peak -3 A PD Total power dissipation Ta=25 1 TC=25 10 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB632 2SB632K CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO PARAMETER CONDITIONS 2SB632 Collector-emitter breakdown voltage MIN TYP. MAX -25 IC=-1mA; RBE=; V -35 2SB632K 2SB632 Collector-base breakdown voltage UNIT -25 IC=-10µA ;IE=0 2SB632K V -35 Emitter-base breakdown voltage IE=-10µA ;IC=0 VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A -0.4 -0.9 V VBEsat Base-emitter saturation voltage IC=-1.5A ;IB=-0.15A -1.1 -1.5 V ICBO Collector cut-off current VCB=-20V; IE=0 -1 µA IEBO Emitter cut-off current VEB=-4V; IC=0 -1 µA hFE-1 DC current gain IC=-0.5A ; VCE=-2V 60 hFE-2 DC current gain IC=-1.5A ; VCE=-2V 30 Transition frequency IC=-50mA ; VCE=-10V 100 MHz Collector output capacitance f=1MHz ; VCB=-10V 45 pF 0.06 µs 0.08 µs 0.40 µs fT COB -5 V 320 Switching times ton Turn-on time tf Fall time tstg IC=500mA ; VCE=12V IB1=-IB2=50mA Storage time hFE-1 Classifications D E F 60-120 100-200 160-320 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB632 2SB632K PACKAGE OUTLINE Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB632 2SB632K 4