SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC CONDITIONS 2SD600 Open emitter 2SD600K 2SD600 VALUE 100 UNIT V 120 Open base 2SD600K 100 V 120 Open collector 5 V Collector current (DC) 1 A ICM Collector current-peak 2 A PD Total power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 Ta=25 1 TC=25 8 W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage CONDITIONS 2SD600 MIN TYP. MAX UNIT 100 IC=1mA; RBE== V 120 2SD600K 2SD600 100 IC=10µA ;IE=0 2SD600K V 120 Emitter-base breakdown voltage IE=10µA ;IC=0 VCEsat Collector-emitter saturation voltage IC=0.5A ;IB=50mA 0.4 V VBEsat Base-emitter saturation voltage IC=0.5A ;IB=50mA 1.2 V ICBO Collector cut-off current VCB=50V; IE=0 1 µA IEBO Emitter cut-off current VEB=4V; IC=0 1 µA hFE-1 DC current gain IC=50mA ; VCE=5V 60 hFE-2 DC current gain IC=0.5A ; VCE=5V 20 Transition frequency IC=50mA ; VCE=10V 130 MHz Collector output capacitance f=1MHz ; VCB=10V 20 pF 0.1 µs 0.5 µs 0.7 µs fT COB 5 V 320 Switching times tf Fall time toff Turn-off time tstg Storage time IC=500mA ; VCE=12V IB1=-IB2=50mA hFE-1 Classifications D E F 60-120 100-200 160-320 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD600 2SD600K SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K 4