SAVANTIC 2SD600K

SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD600 2SD600K
DESCRIPTION
·With TO-126 package
·Complement to type 2SB631/631K
·High breakdown voltage VCEO100/120V
·High current 1A
·Low saturation voltage
APPLICATIONS
·For low-frequency power amplifier
applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
CONDITIONS
2SD600
Open emitter
2SD600K
2SD600
VALUE
100
UNIT
V
120
Open base
2SD600K
100
V
120
Open collector
5
V
Collector current (DC)
1
A
ICM
Collector current-peak
2
A
PD
Total power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
Ta=25
1
TC=25
8
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD600 2SD600K
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
PARAMETER
Collector-emitter
breakdown voltage
Collector-base
breakdown voltage
CONDITIONS
2SD600
MIN
TYP.
MAX
UNIT
100
IC=1mA; RBE==
V
120
2SD600K
2SD600
100
IC=10µA ;IE=0
2SD600K
V
120
Emitter-base breakdown voltage
IE=10µA ;IC=0
VCEsat
Collector-emitter saturation voltage
IC=0.5A ;IB=50mA
0.4
V
VBEsat
Base-emitter saturation voltage
IC=0.5A ;IB=50mA
1.2
V
ICBO
Collector cut-off current
VCB=50V; IE=0
1
µA
IEBO
Emitter cut-off current
VEB=4V; IC=0
1
µA
hFE-1
DC current gain
IC=50mA ; VCE=5V
60
hFE-2
DC current gain
IC=0.5A ; VCE=5V
20
Transition frequency
IC=50mA ; VCE=10V
130
MHz
Collector output capacitance
f=1MHz ; VCB=10V
20
pF
0.1
µs
0.5
µs
0.7
µs
fT
COB
5
V
320
Switching times
tf
Fall time
toff
Turn-off time
tstg
Storage time
IC=500mA ; VCE=12V
IB1=-IB2=50mA
hFE-1 Classifications
D
E
F
60-120
100-200
160-320
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SD600 2SD600K
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD600 2SD600K
4