SAVANTIC 2SB713

SavantIC Semiconductor
Product Specification
2SB713
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3PN package
·Wide area of safe operation
·Excellent good linearity of hFE
APPLICATIONS
·For high power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-200
V
VCEO
Collector-emitter voltage
Open base
-140
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current (DC)
-9
A
ICP
Collector current (Pulse)
-15
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SB713
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBE
MAX
UNIT
IC=-7A; IB=-0.7A
-2.0
V
Base-emitter on voltage
IC=-7A;VCE=-5V
-1.8
V
ICBO
Collector cut-off current
VCB=-140V; IE=0
-50
µA
IEBO
Emitter cut-off current
VEB=-3V; IC=0
-50
µA
hFE-1
DC current gain
IC=-20mA ; VCE=-5V
20
hFE-2
DC current gain
IC=-1A ; VCE=-5V
40
hFE-3
DC current gain
IC=-7A ; VCE=-5V
15
Transition frequency
IC=-0.5A ; VCE=-5V
7
MHz
Collector output capacitance
f=1MHz;VCB=-10V
220
pF
fT
COB
CONDITIONS
hFE-2 Classifications
R
Q
P
40-80
60-120
100-200
2
MIN
TYP.
200
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
2SB713