SavantIC Semiconductor Product Specification 2SD1718 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1163 ·Excellent linearity of hFE ·Wide area of safe operation (ASO) ·High transition frequency fT APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 180 V VCEO Collector-emitter voltage Open base 180 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A ICM Collector current-peak 25 A PC Collector power dissipation 3.5 W TC=25 150 Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1718 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBE MAX UNIT IC=10A ;IB=1A 2.5 V Base-emitter voltage IC=8A ; VCE=5V 1.8 V ICBO Collector cut-off current VCB=180V; IE=0 50 µA IEBO Emitter cut-off current VEB=3V; IC=0 50 µA hFE-1 DC current gain IC=20mA ; VCE=5V 20 hFE-2 DC current gain IC=1A ; VCE=5V 60 hFE-3 DC current gain IC=8A ; VCE=5V 20 Transition frequency IC=0.5A ; VCE=5V 20 MHz Collector output capacitance f=1MHz;VCB=10V 230 pF fT COB CONDITIONS hFE-2 classifications Q S P 60-100 80-160 100-200 2 MIN TYP. 200 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3 2SD1718