Inchange Semiconductor Product Specification 2SD2053 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Wide area of safe operation ・Complement to type 2SB1362 APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 9 A ICP Collector current (Pulse) 15 A PC Collector power dissipation Ta=25℃ 2.5 W TC=25℃ 100 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD2053 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0 VCEsat Collector-emitter saturation voltage IC=7A; IB=0.7A 2.0 V VBE Base-emitter on voltage IC=7A;VCE=5V 1.8 V ICBO Collector cut-off current VCB=150V; IE=0 50 μA IEBO Emitter cut-off current VEB=5V; IC=0 50 μA hFE-1 DC current gain IC=20mA ; VCE=5V 20 hFE-2 DC current gain IC=1A ; VCE=5V 60 hFE-3 DC current gain IC=7A ; VCE=5V 15 Transition frequency IC=0.5A ; VCE=5V 20 MHz Collector output capacitance f=1MHz;VCB=10V 150 pF fT COB CONDITIONS hFE-2 Classifications Q P 60-120 100-200 2 MIN TYP. MAX 150 UNIT V 200 Inchange Semiconductor Product Specification 2SD2053 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3