SavantIC Semiconductor Product Specification 2SB1161 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1716 ·High fT ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector-emitter voltage Open base -160 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -12 A ICP Collector current-peak -20 A PC Collector power dissipation TC=25 120 Ta=25 3 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1161 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBE CONDITIONS MAX UNIT IC=-8A ;IB=-0.8A -2.0 V Base-emitter on voltage IC=-8A ; VCE=-5V -1.8 V ICBO Collector cut-off current VCB=-160V; IE=0 -50 µA IEBO Emitter cut-off current VEB=-3V; IC=0 -50 µA hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE -2 DC current gain IC=-1A ; VCE=-5V 60 hFE -3 DC current gain IC=-8A ; VCE=-5V 20 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 420 pF fT Transition frequency IC=-0.5A ; VCE=-5V 20 MHz hFE-2 classifications Q S P 60-120 80-160 100-200 2 MIN TYP. 200 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 2SB1161