SavantIC Semiconductor Product Specification 2SB757 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·High collector current ·Wide area of safe operation ·Complement to type 2SD847 APPLICATIONS ·Audio amplifications ·Serie regulators ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol ABSOLUTE MAXIMUM RATINGS (Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -40 V VCEO Collector-emitter voltage Open base -40 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IB Base current -5 A PC Collector power dissipation 80 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 1.56 UNIT /W SavantIC Semiconductor Product Specification 2SB757 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-0.1mA; IE=0 -40 V V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -40 V V(BR)EBO Emitter-base breakdown voltage IE=-0.1mA; IC=0 -5 V VCE(sat) Collector-emitter saturation voltage IC=-5A; IB=-0.5A -0.8 V VBE(sat) Base-emitter saturation voltage IC=-5A; IB=-0.5A -1.8 V ICBO Collector cut-off current VCB=-40V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 µA hFE DC current gain IC=-5A ; VCE=-2V 40 240 Switching times ton Turn-on time ts Storage time tf Fall time IC=-15A;IB1=-IB2=-1.5A RL=2@;PW=20µs,DutyB2% 2 1.0 µs 2.0 µs 1.0 µs SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SB757