SavantIC Semiconductor Product Specification 2SD1049 Silicon NPN Power Transistors · DESCRIPTION ·With TO-3PN package ·High current, ·High speed switching ·High reliability APPLICATIONS ·Switching regulators ·Motor controls ·High frequency inverters ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 25 A IB Base current 5 A PC Collector power dissipation 80 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL R9jc CHARACTERISTICS Thermal resistance junction to case MAX UNIT 1.55 /W SavantIC Semiconductor Product Specification 2SD1049 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 80 V V(BR)CBO Collector-base breakdown voltage IC=0.1mA ;IE=0 120 V V(BR)EBO Emitter-base breakdown voltage IE=0.1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=25A; IB=2.5A 1.5 V VBEsat Base-emitter saturation voltage IC=25A ;IB=2.5A 2.0 V ICBO Collector cut-off current VCB=120V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=25A ; VCE=5V 1.0 µs 2.5 µs 0.4 µs 20 Switching times ton Turn-on time tstg Storage time tf IC=25A IB1=-IB2=2.5A RL=3B;PW=20µs; DutyC2% Fall time 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SD1049